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IRFR2905 Datasheet

  • IRFR2905

  • AUTOMOTIVE MOSFET

  • 212.77KB

  • IRF

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PD - 95811
AUTOMOTIVE MOSFET
IRFR2905Z
IRFU2905Z
HEXFET
庐
Power MOSFET
D
Features
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Advanced Process Technology
Ultra Low On-Resistance
175掳C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 55V
G
S
R
DS(on)
= 14.5m鈩?/div>
I
D
= 42A
Description
Specifically designed for Automotive applications, this HEXFET
庐
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175掳C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR2905Z
Max.
59
42
42
240
110
I-Pak
IRFU2905Z
Units
A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25掳C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100掳C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25掳C Continuous Drain Current, V
GS
Pulsed Drain Current
I
DM
聶
@ 10V
(Package Limited)
P
D
@T
C
= 25掳C Power Dissipation
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
W
W/掳C
V
mJ
A
mJ
d
0.72
卤 20
Single Pulse Avalanche Energy Tested Value
脙聶
h
55
82
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
掳C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
胃JC
R
胃JA
R
胃JA
Junction-to-Case
y
y
j
Parameter
Typ.
Max.
1.38
40
110
Units
掳C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
ij
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HEXFET
庐
is a registered trademark of International Rectifier.
www.irf.com
1
11/24/03

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IRFU2905Z

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